AFGHL40T65SPD
AFGHL40T65SPD
Артикул:
AFGHL40T65SPD
Описание:
AFGHL40T65SPD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
267 W
Описание
Insulated-gate bipolar transistor-AFGHL40T65SPD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
267 W
Описание
Insulated-gate bipolar transistor-AFGHL40T65SPD: Биполярный транзистор с изолированным затвором