История:
2DB1132R-13
AFGHL50T65SQDC
AFGHL50T65SQDC
Артикул:
Описание:
AFGHL50T65SQDC
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-AFGHL50T65SQDC: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-AFGHL50T65SQDC: Биполярный транзистор с изолированным затвором

