История:
JANS1N6173AUS/TR
JANTX1N6173A/TR
P1500SCMCLRP
AFGHL50T65SQDC
AFGHL50T65SQDC
Артикул:
AFGHL50T65SQDC
Описание:
AFGHL50T65SQDC
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-AFGHL50T65SQDC: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-AFGHL50T65SQDC: Биполярный транзистор с изолированным затвором

