AIGW50N65H5XKSA1
AIGW50N65H5XKSA1
Артикул:
AIGW50N65H5XKSA1
Описание:
AIGW50N65H5XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.66 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
270 W
Описание
Insulated-gate bipolar transistor-AIGW50N65H5XKSA1: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.66 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
270 W
Описание
Insulated-gate bipolar transistor-AIGW50N65H5XKSA1: Биполярный транзистор с изолированным затвором