APT100GN60LDQ4G
APT100GN60LDQ4G
Артикул:
APT100GN60LDQ4G
Описание:
APT100GN60LDQ4G
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
229 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-APT100GN60LDQ4G: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
229 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-APT100GN60LDQ4G: Биполярный транзистор с изолированным затвором