APT25GT120BRDQ2G
APT25GT120BRDQ2G
Артикул:
APT25GT120BRDQ2G
Описание:
APT25GT120BRDQ2G
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
54 A
Power Dispation
347 W
Описание
Insulated-gate bipolar transistor-APT25GT120BRDQ2G: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
54 A
Power Dispation
347 W
Описание
Insulated-gate bipolar transistor-APT25GT120BRDQ2G: Биполярный транзистор с изолированным затвором