APT33GF120BRG
APT33GF120BRG
Артикул:
APT33GF120BRG
Описание:
APT33GF120BRG
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
52 A
Power Dispation
297 W
Описание
Insulated-gate bipolar transistor-APT33GF120BRG: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
52 A
Power Dispation
297 W
Описание
Insulated-gate bipolar transistor-APT33GF120BRG: Биполярный транзистор с изолированным затвором