APT35GN120BG
APT35GN120BG
Артикул:
APT35GN120BG
Описание:
APT35GN120BG
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
94 A
Power Dispation
379 W
Описание
Insulated-gate bipolar transistor-APT35GN120BG: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
94 A
Power Dispation
379 W
Описание
Insulated-gate bipolar transistor-APT35GN120BG: Биполярный транзистор с изолированным затвором