APT40GR120B2D30
APT40GR120B2D30
Артикул:
APT40GR120B2D30
Описание:
APT40GR120B2D30
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
88 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-APT40GR120B2D30: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
88 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-APT40GR120B2D30: Биполярный транзистор с изолированным затвором