APT43GA90BD30
APT43GA90BD30
Артикул:
APT43GA90BD30
Описание:
APT43GA90BD30
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
78 A
Power Dispation
337 W
Описание
Insulated-gate bipolar transistor-APT43GA90BD30: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
78 A
Power Dispation
337 W
Описание
Insulated-gate bipolar transistor-APT43GA90BD30: Биполярный транзистор с изолированным затвором