История:
JANS1N6161AUS/TR
Xeon E5-2418L v2 2.0GHz LGA1356
CS45-08IO1
CS92M TRE TIN/LEAD
OMAP3530ECBBLPD
S10B-CCH-1L.M-PG29
DG638-9.52-DB-03P
5.0SMDJ20CA
MTAC-S-080A-V5-03-5.0M-10A(H)
DSR1.5-1.5-05
16A-GF-1.0
S10B-CCH-1L.M-PG21
5A-GF-0.52
Xeon E5-2618L v3 2.30GHz FC-LGA12A
AUIRG4BC30SSTRL
LS1018ASE7KQA
S6B-TE-2B-PG13.5
ESF-RS120A25BC
S10B-CCH-1L.M-M25
16A-GF-0.5
LS1017AXE7PQA
195655
16A-SF-1.0
16A-GF-4.0
D-WS2.5P-01
OMAP3530ECUS
APT45GP120J
APT45GP120J
Артикул:
APT45GP120J
Описание:
APT45GP120J
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
34 A
Power Dispation
329 W
Описание
Insulated-gate bipolar transistor-APT45GP120J: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
34 A
Power Dispation
329 W
Описание
Insulated-gate bipolar transistor-APT45GP120J: Биполярный транзистор с изолированным затвором

