APT50GN120L2DQ2G
APT50GN120L2DQ2G
Артикул:
APT50GN120L2DQ2G
Описание:
APT50GN120L2DQ2G
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
134 A
Power Dispation
543 W
Описание
Insulated-gate bipolar transistor-APT50GN120L2DQ2G: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
134 A
Power Dispation
543 W
Описание
Insulated-gate bipolar transistor-APT50GN120L2DQ2G: Биполярный транзистор с изолированным затвором