APT50GN60BDQ2G
APT50GN60BDQ2G
Артикул:
Описание:
APT50GN60BDQ2G
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
107 A
Power Dispation
366 W
Описание
Insulated-gate bipolar transistor-APT50GN60BDQ2G: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
107 A
Power Dispation
366 W
Описание
Insulated-gate bipolar transistor-APT50GN60BDQ2G: Биполярный транзистор с изолированным затвором