История:
CS20-16IO1
CS92B PBFREE
JANTX1N6161AUS/TR
APT50GS60BRDQ2G
APT50GS60BRDQ2G
Артикул:
APT50GS60BRDQ2G
Описание:
APT50GS60BRDQ2G
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
93 A
Power Dispation
415 W
Описание
Insulated-gate bipolar transistor-APT50GS60BRDQ2G: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
93 A
Power Dispation
415 W
Описание
Insulated-gate bipolar transistor-APT50GS60BRDQ2G: Биполярный транзистор с изолированным затвором

