APT50GS60BRG
APT50GS60BRG
Артикул:
Описание:
APT50GS60BRG
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
93 A
Power Dispation
415 W
Описание
Insulated-gate bipolar transistor-APT50GS60BRG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
93 A
Power Dispation
415 W
Описание
Insulated-gate bipolar transistor-APT50GS60BRG: Биполярный транзистор с изолированным затвором