APT50GT60BRDQ2G
APT50GT60BRDQ2G
Артикул:
APT50GT60BRDQ2G
Описание:
APT50GT60BRDQ2G
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
110 A
Power Dispation
446 W
Описание
Insulated-gate bipolar transistor-APT50GT60BRDQ2G: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
110 A
Power Dispation
446 W
Описание
Insulated-gate bipolar transistor-APT50GT60BRDQ2G: Биполярный транзистор с изолированным затвором