APT54GA60BD30
APT54GA60BD30
Артикул:
APT54GA60BD30
Описание:
APT54GA60BD30
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
96 A
Power Dispation
416 W
Описание
Insulated-gate bipolar transistor-APT54GA60BD30: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
96 A
Power Dispation
416 W
Описание
Insulated-gate bipolar transistor-APT54GA60BD30: Биполярный транзистор с изолированным затвором