История:
LM8342SD/NOPB
APT80GA60LD40
APT80GA60LD40
Артикул:
APT80GA60LD40
Описание:
APT80GA60LD40
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
143 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-APT80GA60LD40: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Microchip
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
143 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-APT80GA60LD40: Биполярный транзистор с изолированным затвором

