AUIRG4PH50S
AUIRG4PH50S
Артикул:
AUIRG4PH50S
Описание:
AUIRG4PH50S
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
57 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-AUIRG4PH50S: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
57 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-AUIRG4PH50S: Биполярный транзистор с изолированным затвором