История:
1N6361/TR
LM8342SD/NOPB
AUIRGP4062D
AUIRGP4062D
Артикул:
AUIRGP4062D
Описание:
AUIRGP4062D
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
48 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-AUIRGP4062D: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
48 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-AUIRGP4062D: Биполярный транзистор с изолированным затвором

