История:
PTGL09AS3R3K4B51A0
PTGL09BA0R5M1B51B0
AUIRGS30B60K
AUIRGS30B60K
Артикул:
AUIRGS30B60K
Описание:
AUIRGS30B60K
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
78 A
Power Dispation
370 W
Описание
Insulated-gate bipolar transistor-AUIRGS30B60K: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
78 A
Power Dispation
370 W
Описание
Insulated-gate bipolar transistor-AUIRGS30B60K: Биполярный транзистор с изолированным затвором

