DGTD120T40S1PT
DGTD120T40S1PT
Артикул:
DGTD120T40S1PT
Описание:
DGTD120T40S1PT
Характеристики
Manufacturer
Diodes Incorporated
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
357 W
Описание
Insulated-gate bipolar transistor-DGTD120T40S1PT: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Diodes Incorporated
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
357 W
Описание
Insulated-gate bipolar transistor-DGTD120T40S1PT: Биполярный транзистор с изолированным затвором