DGTD65T15H2TF
DGTD65T15H2TF
Артикул:
DGTD65T15H2TF
Описание:
DGTD65T15H2TF
Характеристики
Manufacturer
Diodes Incorporated
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Continuous Collector Current at 25 C
30 A
Power Dispation
48 W
Описание
Insulated-gate bipolar transistor-DGTD65T15H2TF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Diodes Incorporated
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Continuous Collector Current at 25 C
30 A
Power Dispation
48 W
Описание
Insulated-gate bipolar transistor-DGTD65T15H2TF: Биполярный транзистор с изолированным затвором