DGTD65T50S1PT
DGTD65T50S1PT
Артикул:
DGTD65T50S1PT
Описание:
DGTD65T50S1PT
Характеристики
Manufacturer
Diodes Incorporated
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-DGTD65T50S1PT: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Diodes Incorporated
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-DGTD65T50S1PT: Биполярный транзистор с изолированным затвором