DGTD65T60S2PT
DGTD65T60S2PT
Артикул:
DGTD65T60S2PT
Описание:
DGTD65T60S2PT
Характеристики
Manufacturer
Diodes Incorporated
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
428 W
Описание
Insulated-gate bipolar transistor-DGTD65T60S2PT: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Diodes Incorporated
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
428 W
Описание
Insulated-gate bipolar transistor-DGTD65T60S2PT: Биполярный транзистор с изолированным затвором