FGA15S125P
FGA15S125P
Артикул:
FGA15S125P
Описание:
FGA15S125P
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1250 V
Collector-Emitter Saturation Voltage
2.72 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
30 A
Power Dispation
136 W
Описание
Insulated-gate bipolar transistor-FGA15S125P: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1250 V
Collector-Emitter Saturation Voltage
2.72 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
30 A
Power Dispation
136 W
Описание
Insulated-gate bipolar transistor-FGA15S125P: Биполярный транзистор с изолированным затвором