FGA20S125P-SN00336
FGA20S125P-SN00336
Артикул:
FGA20S125P-SN00336
Описание:
FGA20S125P-SN00336
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1250 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
40 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-FGA20S125P-SN00336: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1250 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
40 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-FGA20S125P-SN00336: Биполярный транзистор с изолированным затвором