FGA20S140P
FGA20S140P
Артикул:
FGA20S140P
Описание:
FGA20S140P
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1400 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
40 A
Power Dispation
272 W
Описание
Insulated-gate bipolar transistor-FGA20S140P: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1400 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
40 A
Power Dispation
272 W
Описание
Insulated-gate bipolar transistor-FGA20S140P: Биполярный транзистор с изолированным затвором