FGA25N120ANTDTU
FGA25N120ANTDTU
Артикул:
FGA25N120ANTDTU
Описание:
FGA25N120ANTDTU
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
312 W
Описание
Insulated-gate bipolar transistor-FGA25N120ANTDTU: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
312 W
Описание
Insulated-gate bipolar transistor-FGA25N120ANTDTU: Биполярный транзистор с изолированным затвором