FGA25S125P-SN00337
FGA25S125P-SN00337
Артикул:
Описание:
FGA25S125P-SN00337
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1250 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
6 V
Continuous Collector Current at 25 C
50 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-FGA25S125P-SN00337: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1250 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
6 V
Continuous Collector Current at 25 C
50 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-FGA25S125P-SN00337: Биполярный транзистор с изолированным затвором