FGA3060ADF
FGA3060ADF
Артикул:
Описание:
FGA3060ADF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
60 A
Power Dispation
176 W
Описание
Insulated-gate bipolar transistor-FGA3060ADF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
60 A
Power Dispation
176 W
Описание
Insulated-gate bipolar transistor-FGA3060ADF: Биполярный транзистор с изолированным затвором