FGA30N65SMD
FGA30N65SMD
Артикул:
FGA30N65SMD
Описание:
FGA30N65SMD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.29 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-FGA30N65SMD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.29 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-FGA30N65SMD: Биполярный транзистор с изолированным затвором