FGA30S120P
FGA30S120P
Артикул:
FGA30S120P
Описание:
FGA30S120P
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1300 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
60 A
Power Dispation
174 W
Описание
Insulated-gate bipolar transistor-FGA30S120P: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1300 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
60 A
Power Dispation
174 W
Описание
Insulated-gate bipolar transistor-FGA30S120P: Биполярный транзистор с изолированным затвором