FGA40N65SMD
FGA40N65SMD
Артикул:
FGA40N65SMD
Описание:
FGA40N65SMD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
349 W
Описание
Insulated-gate bipolar transistor-FGA40N65SMD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
349 W
Описание
Insulated-gate bipolar transistor-FGA40N65SMD: Биполярный транзистор с изолированным затвором