FGA40S65SH
FGA40S65SH
Артикул:
FGA40S65SH
Описание:
FGA40S65SH
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGA40S65SH: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGA40S65SH: Биполярный транзистор с изолированным затвором