FGA40T65SHD
FGA40T65SHD
Артикул:
FGA40T65SHD
Описание:
FGA40T65SHD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.14 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGA40T65SHD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.14 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGA40T65SHD: Биполярный транзистор с изолированным затвором