История:
AUIRG4PH50S
MEAC-T-032A-V1-03-5.0M-30A(H)
FGA40T65SHDF
FGA40T65SHDF
Артикул:
FGA40T65SHDF
Описание:
FGA40T65SHDF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.81 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGA40T65SHDF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.81 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGA40T65SHDF: Биполярный транзистор с изолированным затвором

