FGA40T65UQDF
FGA40T65UQDF
Артикул:
FGA40T65UQDF
Описание:
FGA40T65UQDF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.33 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
231 W
Описание
Insulated-gate bipolar transistor-FGA40T65UQDF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.33 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
231 W
Описание
Insulated-gate bipolar transistor-FGA40T65UQDF: Биполярный транзистор с изолированным затвором