FGA5065ADF
FGA5065ADF
Артикул:
FGA5065ADF
Описание:
FGA5065ADF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.28 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
100 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGA5065ADF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.28 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
100 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGA5065ADF: Биполярный транзистор с изолированным затвором