FGA50N100BNTD2
FGA50N100BNTD2
Артикул:
FGA50N100BNTD2
Описание:
FGA50N100BNTD2
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1000 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
50 A
Power Dispation
156 W
Описание
Insulated-gate bipolar transistor-FGA50N100BNTD2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1000 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
50 A
Power Dispation
156 W
Описание
Insulated-gate bipolar transistor-FGA50N100BNTD2: Биполярный транзистор с изолированным затвором