FGA50S110P
FGA50S110P
Артикул:
FGA50S110P
Описание:
FGA50S110P
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1100 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
50 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-FGA50S110P: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1100 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
50 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-FGA50S110P: Биполярный транзистор с изолированным затвором