FGA50T65SHD
FGA50T65SHD
Артикул:
Описание:
FGA50T65SHD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.14 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
100 A
Power Dispation
319 W
Описание
Insulated-gate bipolar transistor-FGA50T65SHD: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.14 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
100 A
Power Dispation
319 W
Описание
Insulated-gate bipolar transistor-FGA50T65SHD: Биполярный транзистор с изолированным затвором