FGA6065ADF
FGA6065ADF
Артикул:
FGA6065ADF
Описание:
FGA6065ADF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
306 W
Описание
Insulated-gate bipolar transistor-FGA6065ADF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
306 W
Описание
Insulated-gate bipolar transistor-FGA6065ADF: Биполярный транзистор с изолированным затвором