История:
APT35GN120L2DQ2G
FGA60N65SMD
FGA60N65SMD
Артикул:
Описание:
FGA60N65SMD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
600 W
Описание
Insulated-gate bipolar transistor-FGA60N65SMD: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
600 W
Описание
Insulated-gate bipolar transistor-FGA60N65SMD: Биполярный транзистор с изолированным затвором

