FGA6530WDF
FGA6530WDF
Артикул:
FGA6530WDF
Описание:
FGA6530WDF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
176 W
Описание
Insulated-gate bipolar transistor-FGA6530WDF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
176 W
Описание
Insulated-gate bipolar transistor-FGA6530WDF: Биполярный транзистор с изолированным затвором