История:
APT65GP60L2DQ2GQ
FGA6560WDF
FGA6560WDF
Артикул:
Описание:
FGA6560WDF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
120 A
Power Dispation
306 W
Описание
Insulated-gate bipolar transistor-FGA6560WDF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
120 A
Power Dispation
306 W
Описание
Insulated-gate bipolar transistor-FGA6560WDF: Биполярный транзистор с изолированным затвором

