История:
AUIRG4PH50S
MEAC-T-032A-V1-03-5.0M-30A(H)
FGA6560WDF
FGA6560WDF
Артикул:
FGA6560WDF
Описание:
FGA6560WDF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
120 A
Power Dispation
306 W
Описание
Insulated-gate bipolar transistor-FGA6560WDF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
120 A
Power Dispation
306 W
Описание
Insulated-gate bipolar transistor-FGA6560WDF: Биполярный транзистор с изолированным затвором

