FGAF20N60SMD
FGAF20N60SMD
Артикул:
FGAF20N60SMD
Описание:
FGAF20N60SMD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
62.5 W
Описание
Insulated-gate bipolar transistor-FGAF20N60SMD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
62.5 W
Описание
Insulated-gate bipolar transistor-FGAF20N60SMD: Биполярный транзистор с изолированным затвором