FGAF40N60UFTU
FGAF40N60UFTU
Артикул:
FGAF40N60UFTU
Описание:
FGAF40N60UFTU
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-FGAF40N60UFTU: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-FGAF40N60UFTU: Биполярный транзистор с изолированным затвором