История:
DG638-9.52-DB-03P
5.0SMDJ20CA
MTAC-S-080A-V5-03-5.0M-10A(H)
DSR1.5-1.5-05
16A-GF-1.0
S10B-CCH-1L.M-PG21
5A-GF-0.52
Xeon E5-2618L v3 2.30GHz FC-LGA12A
AUIRG4BC30SSTRL
LS1018ASE7KQA
S6B-TE-2B-PG13.5
ESF-RS120A25BC
S10B-CCH-1L.M-M25
16A-GF-0.5
LS1017AXE7PQA
195655
16A-SF-1.0
16A-GF-4.0
D-WS2.5P-01
OMAP3530ECUS
FGAF40S65AQ
FGAF40S65AQ
Артикул:
FGAF40S65AQ
Описание:
FGAF40S65AQ
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
94 W
Описание
Insulated-gate bipolar transistor-FGAF40S65AQ: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
94 W
Описание
Insulated-gate bipolar transistor-FGAF40S65AQ: Биполярный транзистор с изолированным затвором

