История:
AUIRG4BC30SSTRL
FGAF40S65AQ
FGAF40S65AQ
Артикул:
Описание:
FGAF40S65AQ
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
94 W
Описание
Insulated-gate bipolar transistor-FGAF40S65AQ: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
94 W
Описание
Insulated-gate bipolar transistor-FGAF40S65AQ: Биполярный транзистор с изолированным затвором

