FGB20N60SF
FGB20N60SF
Артикул:
FGB20N60SF
Описание:
FGB20N60SF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
208 W
Описание
Insulated-gate bipolar transistor-FGB20N60SF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
208 W
Описание
Insulated-gate bipolar transistor-FGB20N60SF: Биполярный транзистор с изолированным затвором