FGB3040G2-F085
FGB3040G2-F085
Артикул:
Описание:
FGB3040G2-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
400 V
Collector-Emitter Saturation Voltage
1.15 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
41 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-FGB3040G2-F085: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
400 V
Collector-Emitter Saturation Voltage
1.15 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
41 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-FGB3040G2-F085: Биполярный транзистор с изолированным затвором